CEP73A3

CEP73A3/CEB73A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 65A, RDS(ON) = 7.5mΩ(typ) @VGS = 10V. RDS(ON) = 10mΩ(typ) @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 65 200 78 0.53 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS 160 IAS 25 Operating and Store Temperature Range TJ,Tstg -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.9 62.5 Units C/W C/W 2005.Mar...