CEP73A3/CEB73A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 65A, RDS(ON) = 7.5mΩ(typ) @VGS = 10V. ...
CEP73A3/CEB73A3
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
30V, 65A, RDS(ON) = 7.5mΩ(typ) @VGS = 10V. RDS(ON) = 10mΩ(typ) @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
65 200 78 0.53
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
EAS 160 IAS 25
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units V V A A W
W/ C mJ A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1.9 62.5
Units C/W C/W
2005.Mar...