CEF08N8

CEP08N8/CEB08N8 CEF08N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP08N8 CEB08N8 CEF08N8 VDSS 800V RDS(ON) 1.55Ω ID 8A @VGS 10V 800V 1.55Ω 8A 10V 800V 1.55Ω 8A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 VDS 800 VGS ±30 ID IDM e 8 5 32 208 PD 1.7 TO-220F 8d 5d 32d 52 0.4 Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS 125 IAS 5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to...