CEV2309
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -1.2A, RDS(ON) = 165mΩ @VGS = -...
CEV2309
P-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
-20V, -1.2A, RDS(ON) = 165mΩ @VGS = -4.5V. RDS(ON) = 300mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-323 package.
D
DS G
SOT-323(SC-70)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS -20
VGS ±8
ID -1.2 IDM -4.8
Maximum Power Dissipation
PD 0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 375
Units V V A A W C
Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 1. 2006.Oct http://www.cetsemi.com
CEV2309
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test ...