CEM4401

CEM4401 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -5.4A, RDS(ON) = 53mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -40 VGS ±20 ID -5.4 IDM -20 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 50 Units V V A A W C Units C/W Specification and data are subject to change without notice . 1 Rev 1. 2006.January http://www.cetsemi.com CEM4401 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Off Characteristic...