CEM9952A
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V...
CEM9952A
Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
FEATURES
30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V.
-30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D1 D2 D2 87 65
1234 S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 30
VGS ±20
ID 3.7 IDM 15
P-Channel -30
±20
-2.9 -10
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A
W
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 62.5
Units C/W
2002.July
5 - 260
http://www.cetsemi.com
CEM9952A
N-Channel Electrical Characteristics TA = 25 C un...
