CEF06N5
Oct. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
500V , 4.5A , RDS(ON)=1Ω @VGS=10V.
6 Super high dense cell design for extremely low RDS(ON).
High power and current handling capability. TO-220F full-pak for through hole
G
D
G
D S TO-220F
S
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Sym...
