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CEM6338
Dual N-Channel MOSFET
Description
CEM6338 Dual N-Channel Enhancement Mode Field Effect
Transistor
FEATURES 60V, 5.2A, RDS(ON) = 41mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM...
CET
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