CEM2192
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 8A, RDS(ON) = 24mΩ @VGS = 4...
CEM2192
Dual N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
20V, 8A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. Surface mount Package.
DD D D 8 7 65
SO-8
1
1 234 S SSG
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous Drain Current-Pulsed a
ID 8 IDM 32
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units V V A A W C
Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
Rev 1. 2012.Sep http://www.cetsemi.com
CEM2192
Electrical Characteristics TA = 25 C unless other...
