Document
CED65A3/CEU65A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
25V, 38A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
25
±20
38 150 33 0.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A W
W/ C C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3.8 50
Units C/W C/W
2006.July
http://www.cetsemi.com 1
CED65A3/CEU65A3
Electrical Characteristics Tc = 25 C unless otherwi.