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CEU65A3 Dataheets PDF



Part Number CEU65A3
Manufacturers CET
Logo CET
Description N-Channel MOSFET
Datasheet CEU65A3 DatasheetCEU65A3 Datasheet (PDF)

CED65A3/CEU65A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 38A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drai.

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CED65A3/CEU65A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 38A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 20mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 25 ±20 38 150 33 0.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 3.8 50 Units C/W C/W 2006.July http://www.cetsemi.com 1 CED65A3/CEU65A3 Electrical Characteristics Tc = 25 C unless otherwi.


CED65A3 CEU65A3 CEU6659


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