CEU21A3

CED21A3/CEU21A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 20A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 70mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 20 45 38 0.25 Operating and Store Temperature Range TJ,Tstg -55 to 175 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 4.0 50 Units V V A A W W/ C C Units C/W C/W Details are subject to change without notice . 6 - 42 Rev 2. 2006.Nov http://www.cetsemi.com CED21A3/CEU...