CEZ3R02

CEZ3R02 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 135A, RDS(ON) = 2.3mΩ @VGS = 10V. RDS(ON) = 3.8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DDDD GSSS PR-PACK (5*6) DD D D 8 7 65 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous Drain Current-Continuous Drain Current-Pulsed a Drain Current-Pulsed a ID @TA ID @TC IDM @TA IDM @TC 36 135 144 540 Maximum Power Dissipation PD 83 Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e Operating and Store Temperature Range EAS IAS TJ,Tstg 800 40 -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient b Symbol RθJC RθJA Limit 1.5 20 Units V V A A A A W mJ ...