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CEK01N6

Part Number	CEK01N6
Manufacturer	CET
Description	N-Channel MOSFET
Published	Jun 12, 2018
Detailed Description	CEK01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense c...
Datasheet	CEK01N6 PDF File

Overview

CEK01N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.
3A, RDS(ON) = 15 Ω @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
D GD S TO-92(Ammopack) GD S TO-92(Bulk) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 650 VGS ±30 Drain Current-Continuous Drain Current-Pulsed a ID 0.
3 IDM 1.
2 Maximum Power Dissipation PD 3.
1 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Leadb Symbol RθJL Limit 40 ...

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