CEK02N6A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 0.4A, RDS(ON) = 8.5 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
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