CEG8304
Dual P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -3.6A, RDS(ON) = 58mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V.
Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package.
D1 1 S1 2 S1 3 G1 4
G2 S2 S2 D
TSS...
