CEG6946A
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 3.7A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package.
G2 S2 S2 D2
TSSOP-8
G1 S1 S1 D1
D1 1 S1 2 S1 3 G1...
