CEG3456
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 5.1A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package.
D S S D
TSSOP-8
G S S D
(1,5,8)D
(4)G
(2,3,6,7)S
...
