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CEG2108E
Dual N-Channel MOSFET
Description
CEG2108E Dual N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY FEATURES 20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. RDS(ON) = 28mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TSSOP-8 fo...
CET
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CEG2108E
Dual N-Channel MOSFET
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