CEC3833
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
30V, 17A, RDS(ON) = 5.0mΩ @VGS = 10V....
CEC3833
N-Channel Enhancement Mode Field Effect
Transistor
PRELIMINARY
FEATURES
30V, 17A, RDS(ON) = 5.0mΩ @VGS = 10V. RDS(ON) = 7.2mΩ @VGS = 4.5V.
Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant.
D
G S
5 67 8 Bottom View
DFN3*3
4 321
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 30
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 17 IDM 68
Maximum Power Dissipation
PD 2.5
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units V V A A
W
C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 50
Units C/W
This is preliminary information on a new product in development now . Details are subject to change without notice .
1
Rev 2. 2013.Dec http://www.cetsemi.com
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Sym...
