BD178

BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications Complement to BD 175/177/179 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter *Collector-Base Voltage : BD176 : BD178 : BD180 : BD176 : BD178 : BD180 Value - 45 - 60 - 80 - 45 - 60 - 80 -5 -3 -7 30 70 8.5 150 - 65 ~ 150 Units V V V V V V V A A W °C/W °C/W °C °C VCEO Collector-Emitter Voltage VEBO IC IC PC Rθja Rθjc TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction to Ambient Junction to Case Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD176 : BD178 : BD180 Collector Cut-off Current : BD176 : BD178 : BD180 Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 100 - 100 -1 40 15 250 - 0.8 - 1.3 3 V V MHz Typ. Max. Units V V V µA µA µA mA ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 150mA VCE = - 2V, IC = - 1A IC = -1 A , IB = - 0.1A VCE = - 2V, IC = -1 A VCE = -10V, IC = - 250mA IEBO hFE1 hFE2 VCE(sat) VBE(on) fT * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed hFE Classificntion Classi...