BD140

PNP Epitaxial Silicon Transistor BD136 Series BD136 / BD138 / BD140 Applications Complement to BD135, BD137 and BD139 Respectively These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Max Unit Collector−Base Voltage BD136 BD138 BD140 VCBO V −45 −60 −80 Collector−Emitter Voltage BD136 BD138 BD140 VCEO V −45 −60 −80 Emitter−Base Voltage VEBO −5 V Collector Current (DC) IC −1.5 A Collector Current (Pulse) ICP −3.0 A Base Current IB −0.5 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Collector Dissipation Collector Dissipation (TA = 25°C) Junction Temperature Storage Temperature Range Symbol PC PC TJ TSTG Max Unit 12.5 W 1.25 W 150 °C −55~150 °C www.onsemi.com 1 23 TO−126 CASE 340AS 1 Emitter 2 Collector 3 Base MARKING DIAGRAM YWW BD1XX Y WW BD1XX XX = Year = Work Week = Specific Device Code = 36, 38, 40 ORDERING INFORMATION Device BD13610STU BD13610S BD13616STU BD13616S BD13810STU BD13816STU BD14010STU BD14016STU BD14016S Package Shipping 60 Units/ Tube 500 Units/ Bulk Box 60 Units/ Tube TO−126 (Pb−Free) 500 Units/ Bulk Box 60 Units/ Tube 60 Units/ Tube 60 Units/ Tube 60 Units/ Tube 500 Units/ Bulk Box © Semiconductor Components Industries, LLC, 2000 1 November, 2019 −...