BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor
BD135 / 137 / 139 NPN Epitaxial Silicon Transistor
August 2013
F...
BD135 / 137 / 139 —
NPN Epitaxial Silicon
Transistor
BD135 / 137 / 139
NPN Epitaxial Silicon
Transistor
August 2013
Features
Complement to BD136, BD138 and BD140 respectively
Applications
Medium Power Linear and Switching
1 TO-126 1. Emitter 2.Collector 3.Base
Ordering Information
Part Number BD13516S BD1356STU
BD13510STU BD13516STU BD13716STU BD13710STU
BD13716S BD13916STU
BD13910S BD13916S BD1396STU BD13910STU
Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139-6 BD139-10
Package TO-126 3L
Packing Method Bulk
Rail
Bulk Rail Bulk Rail
© 2007 Fairchild Semiconductor Corporation BD135 / 137 / 139 Rev. 1.2.0
1
www.fairchildsemi.com
BD135 / 137 / 139 — Features
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
BD135
45
VCBO Collector-Base Voltage
BD137 BD139
60 V 80
VCEO Collector-Emitter Voltage
BD135 BD137
45 60 V
BD139
80
VEBO IC ICP IB
PC
TJ TSTG
Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current
Device Dissipation
Juncti...