BCY88

DISCRETE SEMICONDUCTORS DATA SHEET M3D126 BCY87; BCY88; BCY89 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors FEATURES Low current (max. 30 mA) Low voltage (max. 45 V). APPLICATIONS Differential amplifier applications in general industrial service e.g. instrumentation and control The BCY87 and BCY88 are intended for use in pre-stages of differential amplifiers where low offset, low drift and low noise are of prime importance The BCY89 is intended for use in second stages of differential amplifiers, long-tailed pairs and more general applications. DESCRIPTION Matched dual NPN transistors in a TO-71; SOT31 metal package. Products are divided into 3 types according to their matching accuracy. 6 5 4 BCY87; BCY88; BCY89 PINNING PIN(1) 1 2 3 4 5 6 Note 1. All leads insulated from the case. DESCRIPTION emitter TR1 emitter TR2 collector TR2 basis TR2 basis TR1 collector TR1 handbook, halfpage 6 1 2 3 4 2 TR2 TR1 MAM351 1 5 3 Fig.1 Simplified outline (TO-71; SOT31) and symbol. QUICK REFERENCE DATA SYMBOL Per transistor VCBO VCEO Ptot hFE collector-base voltage collector-emitter voltage total power dissipation DC current gain BCY87 BCY88 BCY89 hFE fT DC current gain transition frequency open emitter open base Tamb ≤ 25 °C VCE = 10 V IC = 5 µA IC = 500 µA IC = 10 mA IC = 50 µA; VCE = 10 V IC =...