Document
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BCY78; BCY79 PNP switching transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 18
Philips Semiconductors
Product specification
PNP switching transistors
FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Switching and amplification. DESCRIPTION PNP switching transistor in a TO-18 metal package. NPN complements: BCY58 and BCY59.
3
BCY78; BCY79
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
1 handbook, halfpage 2
3 2
MAM263
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BCY78 BCY79 VCEO collector-emitter voltage BCY78 BCY79 IC Ptot hFE collector current (DC) total power dissipation DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X fT toff transition frequency turn-off time IC = −10 mA; VCE = −5 V Tamb ≤ 45 °C Tcase ≤ 45 °C IC = −2 mA; VCE = −5 V 120 180 250 380 100 ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA − 220 310 460 630 − 400 MHz ns open base − − − − − −32 −45 −100 340 1 V V mA mW W open emitter − − −32 −45 V V CONDITIONS MIN. MAX. UNIT
1997 Jun 18
2
Philips Semiconductors
Product specification
PNP switching transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCY78 BCY79 VCEO collector-emitter voltage BCY78 BCY79 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 45 °C Tcase ≤ 45 °C open collector − − − − − −65 − −65 open base − − PARAMETER collector-base voltage CONDITIONS open emitter − −
BCY78; BCY79
MIN.
MAX. −32 −45 −32 −45 −5 −100 −200 −200 340 1 +150 200 +150 V V V V V
UNIT
mA mA mA mW W °C °C °C
THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-c PARAMETER thermal resistance from junction to ambient thermal resistance from junction to case CONDITIONS in free air VALUE 450 150 UNIT K/W K/W
1997 Jun 18
3
Philips Semiconductors
Product specification
PNP switching transistors
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO BCY78 ICBO collector cut-off current BCY79 IEBO hFE emitter cut-off current DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X hFE DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X hFE DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X hFE DC current gain BCY78/VII; BCY79/VII BCY78/VIII; BCY79/VIII BCY78/IX; BCY79/IX BCY78/X VCEsat VBEsat VBE collector-emitter saturation voltage IC = −10 mA; IB = −250 µA IC = −100 mA; IB = −2.5 mA base-emitter saturation voltage base-emitter voltage IC = −10 mA; IB = −250 µA IC = −100 mA; IB = −2.5 mA IC = −10 µA; VCE = −5 V IC = −2 mA; VCE = −5 V IC = −10 mA; VCE = −1 V IC = −100 mA; VCE = −1 V Cc Ce fT collector capacitance emitter capacitance transition frequency IE = ie = 0; VCB = −10 V; f = 1 MHz IC = ic = 0; VEB = −500 mV; f = 1 MHz IC = −100 mA; VCE = −1 V 40 45 60 60 − − IC = −10 mA; VCE = −1 V 80 120 160 240 IC = −2 mA; VCE = −5 V 120 180 250 380 IE = 0; VCB = −45 V IE = 0; VCB = −45 V; Tamb = 150 °C IC = 0; VEB = −5 V IC = −10 µA; VCE = −5 V − 30 40 100 − − − PARAMETER collector cut-off current IE = 0; VCB = −32 V IE = 0; VCB = −32 V; Tamb = 150 °C − − CONDITIONS
BCY78; BCY79
MIN.
TYP. −2 − −2 − − 140 200 270 340 170 250 350 500 180 260 360 500 − − − − −120 −400 −700 −850 −550 −650 −650 −750 − − −
MAX. −15 −10 −15 −10 −20 − − − − 220 310 460 630 − 400 630 1000 − − − − −250 −800 −850 − −750 − − 7 15 −
UNIT nA µA nA µA nA
mV mV mV mV mV mV mV pF pF MHz
−600 −700 − −600 − − − −
−1200 mV
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
1997 Jun 18
4
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
SYMBOL F
PARAMETER noise figure
CONDITIONS IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA; test conditions A
MIN. −
TYP. −
MAX. 10
UNIT dB
Switching times (between 10% and 90% levels); see Fig.2 ton td tr toff ts tf ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time turn-on time delay time rise time turn-off time storage time fall time ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA; test conditions B − − − − − − − − − − − − − − − − − − − − − − − − 100 50 50 700 600 100 100 35 65 400 300 100 ns ns ns ns ns ns ns ns ns ns ns ns
ndbook, full pagewidth
VBB
VCC
RB (probe) oscilloscope 450 Ω Vi R1 R2
RC Vo (probe) 450 Ω DUT oscilloscope
MGD624
Test conditions A Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω. VBB = 1.9 V; VCC = −3 V Oscilloscope input impedance Zi = 50 Ω.
Test conditions B Vi = −9.8 V; T = 500 µs; tp = 10 µs; tr = tf .