BCY70

DISCRETE SEMICONDUCTORS DATA SHEET M3D361 BCY70; BCY71 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 11 Philips Semiconductors Product specification PNP general purpose transistors FEATURES Low current (max. 200 mA) Low voltage (max. 45 V). APPLICATIONS General purpose industrial applications. DESCRIPTION PNP transistor in a TO-18 metal package. 3 1 handbook, halfpage 2 BCY70; BCY71 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION 3 2 MAM263 1 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BCY70 BCY71 VCEO collector-emitter voltage BCY70 BCY71 ICM Ptot hFE fT peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = −10 mA; VCE = −1 V IC = −10 mA; VCE = −20 V; f = 100 MHz open base − − − − 100 250 −40 −45 −200 350 − − MHz V V mA mW open emitter − − −50 −45 V V CONDITIONS MIN. MAX. UNIT 1997 Jul 11 2 Philips Semiconductors Product specification PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCY70 BCY71 VCEO collector-emitter voltage BCY70 BCY71 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 2...