HABT3904

REPLACEMENT TYPE : MMBT3904 FEATURES  NPN Silicon Epitaxial Planar Transistor  for switching and amplifier applications.  Complement to HABT3906(PNP) HABT3904(NPN) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA =25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Collector Current-Continuous IC 200 Collector Power Dissipation PC 200 Thermal Resistance Junction to Ambient RθJA 625 Junction Temperature TJ 150 Storage Temperature Tstg -55to+150 Unit V V V mA mW °C °C °C SOT-23 MARKING : 1AM 1: BASE 2：EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC= 10mA , IE=0 Collector-Emitter Breakdown Voltage VCEO IC= 1mA , IB=0 Emitter-base Breakdown Voltage VEBO IE=10μA , IC=0 Collector Cut-off Current ICBO VCB=60V , IE=0 Collector Cut-off Current ICEO...