BCX70H

BCX70H GENERAL PURPOSE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25° C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Refer to KS3904 for graphs Symbol VCBO VCEO VEBO IC PC T STG Rating 45 45 5 200 350 150 Unit V V V mA mW °C 1. Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (TA=25° C) Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Symbol BVCEO BVEBO ICES IEBO hFE Test Conditions IC=2.0mA, IB=0 IE=1.0µA, IC=0 VCE=32V, VBE=0 VEB=4V, IC=0 VCE=5V, IC=10µA VCE=5V, IC=2.0mA VCE=1V, IC=50mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=10mA, IB=0.25mA IC=50mA, IB=1.25mA IC=2.0mA, VCE=5V IC=10mA, VCE=5V VCE=10V, IE=0 f=1MHz VCE=5V, IC=0.2mA RS=2KΩ , f=1KHz IC=10mA, IB1=1.0mA VBB=3.6V, IB2=1.0mA R1=R2=5KΩ , RL=990Ω Min 45 5 20 20 120 180 70 310 0.35 0.55 0.85 1.05 0.75 V V V V V MHz pF dB ns ns Max Unit V V nA nA Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time Turn Off Time VCE (sat) VBE (sat) VBE (on) fT COB NF T ON T OFF 0.6 0.7 0.55 125 4.5 6 150 800 Rev. B © 1999 Fairchild Semiconductor Corporation TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized...