BCX68
NPN Silicon AF Transistors
For general AF applications High collector current High current gain Low collec...
BCX68
NPN Silicon AF
Transistors
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX69 (
PNP)
1 2 3
2
VPS05162
Type BCX68 BCX68-10 BCX68-16 BCX68-25 Maximum Ratings Parameter
Marking CA CB CC CD 1=B 1=B 1=B 1=B
Pin Configuration 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E
Package SOT89 SOT89 SOT89 SOT89
Symbol VCEO VCBO VEBO
Values 20 25 5 1 2 100 200 1 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 °C Junction temperature Storage temperature
Thermal Resistance
IC ICM IB IBM Ptot Tj Tstg
A mA W °C
Junction - soldering point 1)
RthJS
20
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jun-29-2001
BCX68
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V BCX68 BCX68-10 BCX68-16 BCX68-25 DC current gain 1) IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitt...
