BCX55

BCX54 BCX55 BCX56 SURFACE MOUNT NPN SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCX54, BCX55, and BCX56 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. SOT-89 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance VCBO VCEO VEBO IC ICM IB IBM PD TJ,Tstg ΘJA BCX54 45 45 BCX55 60 60 5.0 1.0 1.5 100 200 1.2 -65 to +150 104 BCX56 100 80 UNITS V V V A A mA mA W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=30V ICBO VCB=30V, TA=125°C IEBO VEB=5.0V BVCBO IC=100µA (BCX54) 45 BVCBO IC=100µA (BCX55) 60 BVCBO IC=100µA (BCX56) 100 BVCEO IC=10mA (BCX54) 45 BVCEO IC=10mA (BCX55) 60 BVCEO IC=10mA (BCX56) 80 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=2.0V, IB=500mA hFE VCE=2.0V, IC=5.0mA 63 hFE VCE=2.0V, IC=150mA 63 hFE VCE=2.0V, IC=150mA (BCX54-10, BCX55-10, BCX56-10) 63 hFE VCE=2.0V, IC=150mA (BCX54-16, BCX55-16, BCX56-16) 100 hFE VCE=2.0V, IC=500mA 40 fT VCE=5.0V, IC=10mA, f=100MHz 130 MAX 100 10 100 0.5 1.0 250 160 250 UNITS nA µA nA V V V V V V V V MHz R1 ( 18-December 2001) Central TM Semiconductor Corp. BCX54 BCX55 BCX56 SURFACE MOUNT NPN...