NPN Silicon AF Transistors
• For AF driver and output stages • High collector current • Low collctor-emitter saturation ...
NPN Silicon AF
Transistors
For AF driver and output stages High collector current Low collctor-emitter saturation voltage Complementary types: BCX51...BCX53 (
PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101
BCX54 ...- BCX56...
1 2 3
2
Type BCX54-16 BCX55 BCX55-16 BCX56 BCX56-10 BCX56-16
Marking BD BE BM BH BK BL
Pin Configuration 1=B 2=C 3=E 1=B 2=C 3=E 1=B 2=C 3=E 1=B 2=C 3=E 1=B 2=C 3=E 1=B 2=C 3=E
Package SOT89 SOT89 SOT89 SOT89 SOT89 SOT89
1 2011-09-19
BCX54 ...- BCX56...
Maximum Ratings Parameter Collector-emitter voltage BCX54 BCX55 BCX56
Symbol VCEO
Value
45 60 80
Collector-base voltage BCX54 BCX55 BCX56
VCBO
45 60 100
Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipationTS ≤ 120°C
VEBO IC ICM IB IBM Ptot
5 1 1.5 100 200 2
Junction temperature
Tj 150
Storage temperature
Tstg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 15
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit -
V
A mA W °C
Unit K/W
2 2011-09-19
BCX54 ...- BCX56...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCX54 IC = 10 mA, IB = 0 , BCX55 IC = 10 mA, IB = 0 , BCX56
V(BR)CEO
45 60 80
-
-
Unit V
Collector-base breakdown voltag...