PNP Silicon AF Transistors
• For AF driver and output stages • High collector current • Low collector-emitter saturation...
PNP Silicon AF
Transistors
For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX54...BCX56 (
NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101
BCX51...-BCX53...
1 2 3
2
Type BCX51 BCX51-16 BCX52 BCX52-16 BCX53 BCX53-10 BCX53-16
Marking AA AD AE AM AH AK AL
Pin Configuration 1=B 2=C 3=E 1=B 2=C 3=E 1=B 2=C 3=E 1=B 2=C 3=E 1=B 2=C 3=E 1=B 2=C 3=E 1=B 2=C 3=E
Package SOT89 SOT89 SOT89 SOT89 SOT89 SOT89 SOT89
1 2011-07-29
BCX51...-BCX53...
Maximum Ratings Parameter Collector-emitter voltage BCX51 BCX52 BCX53
Symbol VCEO
Value
45 60 80
Collector-base voltage BCX51 BCX52 BCX53
VCBO
45 60 100
Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Peak base current Total power dissipation TS ≤ 120 °C
VEBO IC ICM IB IBM Ptot
5 1 1.5 100 200 2
Junction temperature
Tj 150
Storage temperature
Tstg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point1)
RthJS
≤ 15
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
A mA W °C Unit K/W
2 2011-07-29
BCX51...-BCX53...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCX51 IC = 10 mA, IB = 0 , BCX52 IC = 10 mA, IB = 0 , BCX53
V(BR)CEO
45 60 80
-
-
Unit V
Collector...