BCX42

BCX42, BSS63 PNP Silicon AF an Swiching Transistors
For general AF applications
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BCX41, BSS64 (NPN) 3 2 1 VPS05161 Type BCX42 BSS63 Maximum Ratings Parameter Marking DKs BMs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BSS63 100 110 5 BCX42 125 125 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 800 1 100 200 330 150 -65 ... 150 mA A mA mW °C Thermal Resistance Junction - soldering point 1) RthJS
215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-10-2001 BCX42, BSS63 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C VCB = 100 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 Collector cutoff current VCE = 100 V, TA = 85 °C VCE = 100 V, TA = 125 °C DC current gain 1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 20 mA,...