BCX19CSM4
GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY AP...
BCX19CSM4
GENERAL PURPOSE
NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA Dimensions in mm (inches)
VCEO = 45V
1.40 ± 0.15 (0.055 ± 0.006) 0.25 ± 0.03 (0.01 ± 0.001)
5.59 ± 0.13 (0.22 ± 0.005)
IC = 500mA
0.64 ± 0.08 (0.025 ± 0.003)
0.23 rad. (0.009) 3 2 1.27 ± 0.05 (0.05 ± 0.002)
3.81 ± 0.13 (0.15 ± 0.005)
FEATURES
0.23 min. (0.009)
4
1
SILICON PLANAR EPITAXIAL
NPN
1.02 ± 0.20 (0.04 ± 0.008) 2.03 ± 0.20 (0.08 ± 0.008)
TRANSISTOR HERMETIC CERAMIC SURFACE MOUNT
SOT 23 CERAMIC (LCC3 PACKAGE)
PAD 1 = Collector PAD 2 = No Collection PAD 3 = Emitter PAD 4 = Base
PACKAGE CECC SCREENING OPTIONS SPACE QUALITY LEVELS OPTIONS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD Rja Tstg,Tj Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Storage Temperature, Operating Temp Range 50V 45V 5V 500mA 350mW 2.0mW / °C 350°C / W –55 to 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.8/00
BCX19CSM4
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCES* VCEO* VEBO* ICBO* IEBO* VCE(sat)* VBE(sat)* hFE* Collector – Emitter Sustaining Voltage Collector – Base Voltage Emitter – Base Breakdown Voltage Collector – Base Cut-off ...