DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BCW89 PNP general purpose transistor
Product specification Sup...
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BCW89
PNP general purpose
transistor
Product specification Supersedes data of 1997 Mar 11 1999 Apr 15
Philips Semiconductors
Product specification
PNP general purpose
transistor
FEATURES Low current (max. 100 mA) Low voltage (max. 60 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION
PNP transistor in a SOT23 plastic package.
1
handbook, halfpage
BCW89
PINNING PIN 1 2 3 base emitter collector DESCRIPTION
3 3
MARKING TYPE NUMBER BCW89 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. MARKING CODE(1) H3∗
Top view
2 1 2
MAM256
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base; IC = −2 mA open collector − − − − − − − −65 − −65 MIN. MAX. −80 −60 −5 −100 −200 −200 250 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT
1999 Apr 15
2
Philips Semiconductors
Product specification
PNP general purpose
transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO h...