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NCE80T900D

NCE Power Semiconductor

N-Channel Super Junction Power MOSFET

NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use ...


NCE Power Semiconductor

NCE80T900D

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Description
NCE80T900D,NCE80T900,NCE80T900F N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ● New technology for high voltage device ● Low on-resistance and low conduction losses ● small package ● Ultra Low Gate Charge cause lower driving requirements ● 100% Avalanche Tested ● ROHS compliant VDS RDS(ON)MAX ID 800 900 6 V mΩ A Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS) Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE80T900D TO-263 NCE80T900D NCE80T900 TO-220 NCE80T900 NCE80T900F TO-220F NCE80T900F TO-263 TO-220 TO-220F Table 1. Absolute Max...




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