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BCW81 Dataheets PDF



Part Number BCW81
Manufacturers NXP
Logo NXP
Description NPN general purpose transistor
Datasheet BCW81 DatasheetBCW81 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW81 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 02 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and high gain amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. 1 handbook, halfpage BCW81 P.

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DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCW81 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 02 Philips Semiconductors Product specification NPN general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and high gain amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. 1 handbook, halfpage BCW81 PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 MARKING TYPE NUMBER BCW81 MARKING CODE K3p Top view 1 2 MAM255 2 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V; f = 100 MHz open emitter open base CONDITIONS − − − − 420 100 MIN. MAX. 50 45 200 250 800 − MHz V V mA mW UNIT 1997 Apr 02 2 Philips Semiconductors Product specification NPN general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base; IC = 2 mA open collector − − − − − − − −65 − −65 MIN. BCW81 MAX. 50 45 5 100 200 200 250 +150 150 +150 V V V UNIT mA mA mA mW °C °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBEsat VBE Cc fT F PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure CONDITIONS IE = 0; VCB = 20 V IE = 0; VCB = 20 V; Tj = 100 °C IC = 0; VEB = 5 V IC = 2 mA; VCE = 5 V IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 10 mA; IB = 0.5 mA IC = 50 mA; IB = 2.5 mA IC = 2 mA; VCE = 5 V IE = Ie = 0; VCB = 10 V; f = 1 MHz IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz MIN. − − − 420 − − − − 550 − 100 − TYP. − − − − 120 210 750 850 − 2.5 − − MAX. 100 10 100 800 250 − − − 700 − − 10 mV mV mV mV mV pF MHz dB UNIT nA µA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 500 UNIT K/W 1997 Apr 02 3 Philips Semiconductors Product specification NPN general purpose transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BCW81 SOT23 D B E A X HE v M A 3 Q A A1 1 e1 e bp 2 w M B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 1997 Apr 02 4 Philips Semiconductors Product specification NPN general purpose transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BCW81 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Apr 02 5 Philips Semiconductors Product specification NPN general purpose transistor NOTES BCW81 1997 Apr 02 6 Philips Semiconductors Product specification NPN general purpose transistor NOTES BCW81 1997 Apr 02 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61.


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