BCW66G

BCW66G BCW66G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500mA. Sourced from process 13. 3 2 1 SOT-23 Mark: EG 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TC=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 45 75 5 1 - 55 ~ +150 Units V V V A °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = 10µA IC = 10mA IE = 10µA VCB = 45V, IE = 0 VCB = 45V, IE = 0 VEB = 4V VCE = 10V, IC = 100µA VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA VCE = 2V, IC = 500mA IC = 100mA, IB = 10mA IC = 500mA, IB = 50mA IC = 500mA, IB = 50mA VCB = 10V, f = 1MHz VEB = 0.5V, f = 1MHz VCE = 10V, IC = 20mA, f = 100MHz VCE = 5V, IC = 0.2mA, RS = 1kΩ, f = 1KHz, BW = 200Hz IB1 ...