N-Channel Super Junction Power MOSFET
NCE65T900I,NCE65T900K
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced t...
Description
NCE65T900I,NCE65T900K
N-Channel Super Junction Power MOSFET Ⅲ
General Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
VDS RDS(ON)TYP. ID
650 750
5
V mΩ A
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65T900I
TO-251
NCE65T900I
NCE65T900K
TO-252
NCE65T900K
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS...
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