NCE65T900K

NCE65T900I，NCE65T900K N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS RDS(ON)TYP. ID 650 750 5 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE65T900I TO-251 NCE65T900I NCE65T900K TO-252 NCE65T900K Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS...