N & P-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE4688
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE4688 ...
Description
http://www.ncepower.com
Pb Free Product
NCE4688
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE4688 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V
N-channel
P-channel
Schematic diagram
● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS=-10V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Marking and pin assignment
Package Marking and Ordering Information
SOP-8 top view
Device Marking Device
Device Package Reel Size
Tape width
4688
NCE4688
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Quantity
2500 units
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 1)
TA=25℃ TA=100...
Similar Datasheet