NCE01P30K

http://www.ncepower.com Pb Free Product NCE01P30K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P30K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-30A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance Schematic diagram Application ● Portable equipment and battery powered systems Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE01P30K NCE01P30K TO-252-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Sou...