NCE01P03S

http://www.ncepower.com Pb Free Product NCE01P03S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE01P03S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features ● VDS =-100V,ID =-3A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) RDS(ON) <230mΩ @ VGS=-4.5V (Typ:200mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density celldesign for ultra low on-resistance Schematic diagram Application ● Power switch ● DC/DC converters Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package NCE01P03S NCE01P03S SOP-8 Reel Size Ø330mm SOP-8 top view Tape width 12mm Quantity 4000 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continu...