BCW33LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW33LT1/D General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 20 30 5.0 100 Unit Vdc Vdc Vdc mAdc BCW33LT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BCW33LT1 = D3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100°C) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — 100 10 nAdc µAdc 32 32 5.0 — — — Vdc Vdc Vdc   0.062 in.   0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data ...