NCE40P05Y

http://www.ncepower.com Pb Free Product NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-5.3A RDS(ON) <85mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V D G S Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter Marking and pin assignment SOT-23-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width 40P05 NCE40P05Y SOT23-3L Ø330mm 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit -40 ±20 Drain...