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NCE30P30G

NCE Power Semiconductor

P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE30P30G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30...


NCE Power Semiconductor

NCE30P30G

File Download Download NCE30P30G Datasheet


Description
http://www.ncepower.com Pb Free Product NCE30P30G NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P30G uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -30V,ID = -30A RDS(ON) < 10mΩ @ VGS=-10V RDS(ON) < 15mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram DDDD DDDD Application ● PWM applications ● Load switch ● Uninterruptible power supply SSSG Top View GSSS Bottom View 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking NCE30P30G Device NCE30P30G Device Package DFN5X6-8L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dis...




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