NCE30P28Q

http://www.ncepower.com Pb Free Product NCE30P28Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE30P28Q uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features ● VDS = -30V,ID = -28A RDS(ON) <12mΩ @ VGS=-10V RDS(ON) <17mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Application ● Power management ● Load switch Top View Bottom View Package Marking and Ordering Information Device Marking Device Device Package NCE30P28Q NCE30P28Q DFN3.3X3.3-8L Reel Size Tape width Quantity Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit -30 ±...