N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H13D uses advanced trench techn...
Description
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE01H13D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Pb Free Product
NCE01H13D
General Features
● VDS =100V,ID =130A RDS(ON) <6.8mΩ @ VGS=10V
(Typ:5.3mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE01H13D
NCE01H13D
TO-263-2L
Reel Size -
Tape width -
Quantity -
Absolute Maxi...
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