NCE70N100I

http://www.ncepower.com Pb Free Product NCE70N100I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features ● VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:12mΩ) S Schematic diagram ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package NCE70N100I NCE70N100I TO-251-3L Reel Size - Tape width - Quantity - Abso...