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NCE5015S Dataheets PDF



Part Number NCE5015S
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet NCE5015S DatasheetNCE5015S Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE5015S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain ch.

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http://www.ncepower.com Pb Free Product NCE5015S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching application ● Load switch Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package NCE5015S NCE5015S SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID .


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