Document
http://www.ncepower.com
Pb Free Product
NCE5015S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 60V,ID =12A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ)
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
Schematic diagram
Application
● Power switching application ● Load switch
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE5015S
NCE5015S
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
.