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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BCW29LT1/D
General Purpose Transistors
PNP Silicon
COLLECTOR 3 1 BASE 2 EMITTER
BCW29LT1 BCW30LT1
3 1
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.0 –100 Unit Vdc Vdc Vdc mAdc
2
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IE = 0) Collector–Emitter Breakdown Voltage (IC = –100 µAdc, VEB = 0) Collector–Base Breakdown Voltage (IC = –10 µAdc, IC = 0) Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) Collector Cutoff Current (VCB = –32 Vdc, IE = 0) (VCB = –32 Vdc, IE = 0, TA = 100°C) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO — — –100 –10 nAdc µAdc –32 –32 –32 –5.0 — — — — Vdc Vdc Vdc Vdc
0.062 in. 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996
1
BCW29LT1 BCW30LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = –2.0 mAdc, VCE = –5.0 Vdc) Collector–Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) hFE BCW29 BCW30 VCE(sat) — VBE(on) –0.6 –0.75 –0.3 Vdc 120 215 260 500 — — Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance (IE = 0, VCB = –10 Vdc, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) Cobo — NF — 10 7.0 dB pF
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
BCW29LT1 BCW30LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
ā
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 µA 30 µA 3.0 2.0 1.0 mA 100 µA 300 µA BANDWIDTH = 1.0 Hz RS ≈ 0 In, NOISE CURRENT (pA)
1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 300 µA 100 µA 30 µA 10 µA 10 20 50 IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS ≈ ∞
1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k
0.1 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
ā
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 0.5 dB 1.0 dB
BANDWIDTH = 1.0 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30
BANDWIDTH = 1.0 Hz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1.0 k
2.0 dB 3.0 dB 5.0 dB 50 70 100 200 300 IC, COLLECTOR CURRENT (µA) 500 700 1.0 k
Figure 3. Narrow Band, 100 Hz
Figure 4. Narrow Band, 1.0 kHz
RS , SOURCE RESISTANCE (OHMS)
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (µA)
+ 20 log10
ƪ
en2
) 4KTRS ) In 2RS2 1ń2
4KTRS
ƫ
en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms)
Figure 5. Wideband Motorola Small–Signal Transistors, FETs and Diodes Device Data 3
BCW29LT1 BCW30LT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125°C 25°C
h FE, DC CURRENT GAIN
200
– 55°C 100 80 60 40 0.003 0.005 BCW29LT1 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
Figure 6. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
IC, COLLECTOR CURRENT (mA)
TA = 25°C BCW29LT1
100
TA = 25°C PULSE WIDTH = 300 µs 80 DUTY CYCLE ≤ 2.0% 300 µA 60
IB = 400 µA 350 µA 250 µA 200 µA 150 µA
0.6
0.4
40
100 µA 50 µA
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 40
Figure 7. Collector Saturation Region
Figure 8. Collector Characteristics
TJ = 25°C
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8
1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) 0 25°C to 125°C – 55°C to 25°C
VBE(sat) @ IC/.