N-Channel Enhancement Mode Power MOSFET
http://www.ncepower.com
Pb Free Product
NCE8651Q
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE8651Q ...
Description
http://www.ncepower.com
Pb Free Product
NCE8651Q
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE8651Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =20V,ID =10A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 11.5mΩ @ VGS=4V RDS(ON) < 12.5mΩ @ VGS=3.1V RDS(ON) < 15.5mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● 2.5V Drive ● Common-drain type
Schematic diagram Pin Assignment
Application
● Battery protection switch ● Mobile device battery charging and discharging
DFN 3x3 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE8651Q
NCE8651Q
DFN 3x3
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current...
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