BCV49

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BCV29; BCV49 NPN Darlington transistors Product specification Supersedes data of 1997 Apr 21 1999 Apr 08 Philips Semiconductors Product specification NPN Darlington transistors FEATURES High current (max. 500 mA) Low voltage (max. 60 V) High DC current gain (min. 20000). APPLICATIONS Preamplifier input applications. DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48. 1 2 3 handbook, halfpage BCV29; BCV49 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 3 2 TR1 TR2 1 MAM300 MARKING Bottom view TYPE NUMBER BCV29 BCV49 MARKING CODE EF EG Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BCV29 BCV49 VCES collector-emitter voltage BCV29 BCV49 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open collector VBE = 0 − − − − − − Tamb ≤ 25 °C; note 1 − −65 − −65 30 60 10 500 1 200 1.3 +150 150 +150 V V V mA A mA W °C °C °C PARAMETER collector-base voltage CO...